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| TCUT1200X01 Subminiature Dual Channel Optical Sensor with Phototransistor Output Description This device has a compact construction where the emitting light source and the detector are located face to face on the same optical axes. The operating wavelength is 950 nm. The detector side incorporates 2 phototransistors. Distance of both channels is 0.8 mm. Features D Dual channel with 0.3 mm aperture D Channel 1 to channel 2 distance 0.8 mm D D D D D D (optical center) Gap 2 mm Package height: 4 mm Surface Mountable Technology (SMD) Parts shipped taped and reeled 2000 pcs / reel Soldering method according to CECC00802 table 1, class B or C Option X01: High rel. devices for advanced applications Application D Accurate position sensor for steering wheel D Detection for motion direction D Detection of motor speed and direction where high reliability performance is required Pin Connection A Cath Cath 13894 Coll E E Figure 1. Rev. A1, 23-Sep-98 1 (9) AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AA A Output (Detector) Input (Emitter) Coupler Parameters Collector emitter voltage Emitter collector voltage Collector current Power dissipation Tamb 25C tp 10 ms Tamb 25C Test Conditions Symbol VCE0 VEC0 IC Pv Symbol VR IF IFSM Pv Value 70 7 20 75 Value 5 25 100 75 Unit V V mA mW Unit V mA mA mW Ambient temperature range Storage temperature range Soldering temperature Parameters Total power dissipation t5s Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd - 40 to+ 85 - 40 to + 100 230 Value 150 Unit mW C C C Absolute Maximum Ratings TCUT1200X01 2 (9) Parameters Reverse voltage Forward current Forward surge current Power dissipation Test Conditions Rev. A1, 23-Sep-98 TCUT1200X01 Electrical Characteristics Tamb = 25C Input (Emitter) P tot - Total Power Dissipation ( mW ) AAAA A AAAA A A A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA A AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA A AAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA A A mA pF 50 Parameters Forward voltage Reverse current Junction capacitance Test Conditions IF = 15 mA VR = 5 V VR = 0 V, f = 1 MHz Symbol VF IR Cj Min. Typ. 1.2 Max. 1.5 10 Unit V Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 25 V, IF = 0, E=0 Symbol VCE0 VEC0 ICE0 Min. 70 7 Typ. Max. 10 100 Unit V V nA Coupler AAAA A A A A A AAAA A A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AA AAAA A A AAAA A A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA A AAAA AAAA A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAA mA V Collector/emitter saturation voltage IF = 15 mA, IC = 0.05 mA VCEsat 0.4 Parameters Collector current per channel Test Conditions VCE = 5 V, IF = 15 mA Symbol IC Min. 300 Typ. 500 Max. Unit Derating Diagram 200 Sensor 150 100 50 Emitter / Detector 0 0 25 50 75 100 13664 Tamb - Ambient Temperature ( C ) Figure 2. Total Power Dissipation vs. Ambient Temperature Rev. A1, 23-Sep-98 3 (9) TCUT1200X01 Application Example IF=15 mA +VC=5 V 74HCT14 10 k GND GND Figure 3. VE UQ 13887 Typical Characteristics (Tamb = 25C, unless otherwise specified) 1000.0 V CEsat - Collector Emitter Saturation Voltage ( V ) 0.180 0.160 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0 -40 -20 0 20 40 60 80 100 IF=15mA IC=50mA I F - Forward Current ( mA ) 100.0 10.0 1.0 0.1 0 13660 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 13662 Tamb - Ambient Temperature ( C ) Figure 4. Forward Current vs. Forward Voltage Figure 5. Collector Em. Sat. Voltage vs. Ambient Temperature 4 (9) Rev. A1, 23-Sep-98 TCUT1200X01 Typical Characteristics (Tamb = 25C, unless otherwise specified) 10.000 VCE=5V IC - Collector Current ( mA ) 1.000 ICEO- Collector Dark Current, with open Base ( nA ) 1000 10000 VCE=10V IF=0 0.100 100 0.010 10 0.001 0.1 13665 1 1.0 10.0 100.0 96 11875 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) IF - Forward Current ( mA ) Figure 6. Collector Current vs. Forward Current 1.3 Figure 9. Collector Dark Current vs. Ambient Temperature 1.25 I Crel - Relative Collector Current IF=15mA VF - Forward Voltage ( V ) 1.2 1.1 1.0 0.9 0.8 -40 13661 1.00 0.75 0.50 0.25 0 -1.5 s -20 0 20 40 60 80 100 13657 -1.0 -0.5 0.0 0.5 1.0 1.5 Tamb - Ambient Temperature ( C ) s - Displacement ( mm ) Figure 7. Forward Voltage vs. Ambient Temperature 1.0 0.9 IC - Collector Current ( mA ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 13663 Figure 10. Rel. Collector Current vs. Distance VCE=5V IF=15mA IF=5mA -20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 8. Collector Current vs. Ambient Temperature Rev. A1, 23-Sep-98 5 (9) TCUT1200X01 Dimensions in mm weight: ca. 0.15 g 12898 6 (9) Rev. A1, 23-Sep-98 TCUT1200X01 Reel Dimensions 13722 Rev. A1, 23-Sep-98 7 (9) TCUT1200X01 Tape Dimensions 13720 8 (9) Rev. A1, 23-Sep-98 TCUT1200X01 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Rev. A1, 23-Sep-98 9 (9) |
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